Alkali Treatment of Metallic Silicon Discharged from Grind Process of Silicon Wafer

Hydrophobic silicon wafer bonding

Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...

High efficiency process development for defect-rich silicon wafer materials

Lecture 21: Silicon wafer manufacturing

The first step in integrated circuit (IC) fabrication is preparing the high purity single crystal Si wafer. This is the starting input to the fab. Typically, Si wafer refers to a single crystal of Si with a specific orientation, dopant type, and resistivity (determined by dopant concentration). Typically, Si (100) or Si (111) wafers are used. The numbers (100) and (111) refers to the orientatio...

The Evolution of Silicon Wafer Cleaning Technology

The purity of wafer surfaces is an essential requisite for the successful fabrication of VLSI and ULSI silicon circuits. Wafer cleaning chemistry has remained essentially unchanged in the past 25 years and is based on hot alkaline and acidic hydrogen peroxide solutions, a process known as "RCA Standard Clean." This is still the primary method used in the industry. What has changed is its implem...

Remote Laboratory for Inspection of Silicon Wafer

During the last decade, there has been a significant increase in the use of remote laboratories (RL) in engineering education. These laboratories allow students to remotely access and perform measurements on real laboratory equipment via the internet. RLs are becoming common educational tools in mechanical, electrical and computer engineering departments of tertiary institutions. However, the m...